Lot of 250 Infineon HEXFET 55V 131A 5.3mOhm 170nC 200W Surface Mount D2PAK N-Channel Power MOSFET IRF1405STRLPBF. Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.